1N4448WS

Marking：S2；Package：SOD-323；Small Signal Diodes

•GeneralPurposeDiodes •FastswitchingDevice(TRR

1PS76SB70

Marking：S2；Package：SOD323；General-purpose Schottky diode

1.Generaldescription General-purposeSchottkydiodeinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance 3.Applications •Ultrahigh-speedswitching

1PS76SB70-Q

Marking：S2；Package：SOD323；General-purpose Schottky diode

1.Generaldescription General-purposeSchottkydiodeinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q101andrecommended

BAS16L

Marking：S2；Package：DFN1006-2；High-speed switching diodes

Featuresandbenefits Highswitchingspeed:trr4ns Lowleakagecurrent Repetitivepeakreversevoltage: VRRM100V AEC-Q101qualified Lowcapacitance Reversevoltage:VR100V SmallSMDplasticpackages

BAS16L

Marking：S2；Package：DFN1006-2；High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinaleadlessultrasmallSOD882Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetitivepe

BAS16L-Q

Marking：S2；Package：DFN1006-2；High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinaleadlessultrasmallSOD882Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetitivep

BAS521B

Marking：S2；Package：SOD523；High-voltage switching diode

1.Generaldescription High-voltageswitchingdiode,inanultrasmallSOD523(SC-72)flatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤50ns •Lowleakagecurrent:IR≤100nA •Highreversevoltage:VR≤200V •Lowcapacitanc

BBY40

Marking：S2；Package：SOT-23；SILICON PLANAR VARIABLE CAPACITANCE DIODE

SOT23SILICONPLANARVARIABLECAPACITANCEDIODE PARTMARKINGDETAILBBY40–S2

BC2302ET

Marking：S2；Package：SOT-523；N-Channel MOSFET

Feature ⚫20VN-ChannelMOSFETHighDenseDesign. ⚫RDS(ON)=280m(typ.)@VGS=4.5V ⚫RDS(ON)=360m(typ.)@VGS=2.5V ⚫ReliableandRugged ⚫ESDProtected Applications ⚫PortableEquipmentandBatteryPowerSystems

BZX84-B3V3

Marking：S2；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt