BZX84-B3V3-Q

Marking：S2；Package：TO-236AB；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

BZX84W-C18

Marking：S2；Package：SOT323；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 3.Applications •Gene

BZX84W-C18-Q

Marking：S2；Package：SC-70；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 •Qualifiedaccordingto

D5V0S1U2LP-7B

Marking：S2；Package：X1-DFN1006-2；HIGH SURGE TVS DIODE

Features LowProfilePackage(0.53mmMax)andUltra-SmallPCB FootprintArea(1.08mm*0.68mmMax)SuitableforCompact PortableElectronics ProvidesESDProtectionperIEC61000-4-2Standard:Air±30kV, Contact±30kV 1ChannelofESDProtection LowChannelInputCapacitance Tota

ISL9021IRUWZ-T

Marking：S2；Package：6LdμTDFN；250mA Single LDO with Low IQ, Low Noise and High PSRR LDO

250mASingleLDOwithLowIQ,LowNoiseandHighPSRRLDO TheISL9021isasingleLDOprovidinghighperformancelowinputvoltage,highPSRR.Itdeliversguaranteedcontinuous250mAloadcurrentandisstablewith1µFto4.7µFofoutputcapacitance(±30)withanESRrangeof5mΩto400mΩ.

PBLS4002Y

Marking：S2；Package：TSSOP6；40 V, 500 mA PNP loadswitch transistor

1.Generaldescription PNPlowVCEsattransistorandNPNResistor-EquippedTransistor(RET)inoneverysmallSOT363 (SC-88)Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •LowVCEsattransistorandresistor-equippedtransistorinonepackage •Lowthresholdvoltage

PBLS4002Y-Q

Marking：S2；Package：TSSOP6；40 V PNP loadswitch transistor

1.Generaldescription PNPlowVCEsattransistorandNPNResistor-EquippedTransistor(RET)inoneverysmallSOT363 (SC-88)Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •LowVCEsattransistorandresistor-equippedtransistorinonepackage •Lowthresholdvoltage

PBSS2515M

Marking：S2；Package：SOT883；15 V, 0.5 A NPN low VCEsat (BISS) transistor

FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtoreducedheatgeneration •Reducedprinted-circuitboardrequirements. APPLICATIONS •Powermanagement: –DC-DCconverter –Supplylineswitching –Batterycharg

RM2302C

Marking：S2；Package：SOT-23；N-Channel Enhancement Mode Mosfet

Features TrenchFETPowerMOSFET LoadSwitchforPortableDevices. DC/DCConverter.

RT6310CGQUF

Marking：S2；Package：UQFN-23L；10A, 23V Synchronous Step-Down Converter with 3.3V/5V LDO

GeneralDescription TheRT6310familyarehighefficiencysynchronousstep-downDC-DCconverterswithpseudoconstantswitchingfrequency500kHzanddeliverupto10Aoutputcurrent.TheRT6310A/B/DandRT6310AH/BH/DHoperatefrom4.5Vto23Vinputvoltage.TheoutputvoltageofRT6310A/AH/D/DHi