S2000AF

Marking：S2000AF；Package：ISOWATT218FX；High voltage NPN Power transistor for standard Definition CRT display

Features ■State-of-the-arttechnology: –Diffusedcollector“Enhancedgeneration” ■Stableperformancesversusoperating temperaturevariation ■Lowbase-driverequirement ■TighhFErangeatoperatingcollectorcurrent ■Highruggedness ■FullyinsulatedpowerpackageU.L.compliant ■I

SKY12208-478LF

Marking：S208；0.02 to 2.7 GHz 50 W High Power Silicon PIN Diode SPDT Switch

Applications Transmit/receiveandfail-safeswitchinginlandmobileradios, publicsafetyradios,andmilitarycommunicationsystems Features Highpowerhandling:50WCW,300Wpeak Lowinsertionloss:0.3dBtypical Controlledwithpositivepowersupply Highantennatoreceiv

SKY12209-478LF

Marking：S209；0.9 to 4.0 GHz 40 W High Power Silicon PIN Diode SPDT Switch

Applications Transmit/receiveswitchingandRFpathswitchingin TD-SCDMA,WiMAX,andLTEbasestations Transmit/receiveandRFpathswitchinginlandmobileradios andmilitarycommunicationsystems Features Highpowerhandling:40WCW Lowinsertionloss:0.3dBtypical High

SS2030DSN

Marking：S2030；Package：DSN1608-2L；Surface Mount Schottky Barrier Rectifier

Features Chipscalepackage(H

TP74LVC2G04S6

Marking：S204；Package：SOT23-6；DUAL INVERTER GATE

Features »Operationvoltagerange:1.65~5.5 »InputsAcceptVoltagesupto5.5VAllowing DownTranslationtoVCC «£24mAoutputdrive(VCC=3.3V) «LowPowerConsumption,10-pAMaxICC »ESDProtectionExceedsJESD22 ~2000-VHuman-BodyModel(A114-A) -200-VMachineModel(A115-A) ~1000-

TP74LVC2G06S6

Marking：S206；Package：SOT23-6；INVERTERS WITH OPEN-DRAIN OUTPUTS

Features »Operatefrom1.65Vto5.5V «InputandOpen-DrainOutput AcceptVoltagesto5.5V «HighNoiseImmunity »ESDProtectionExceedsJESD22 -2000-VHuman-BodyModel(A114-A) -200-VMachineModel(A115-A) -1000-VCharged-DeviceModel(C101)

TP74LVC2G07S6

Marking：S207；Package：SOT23-6；BUFFERS WITH OPEN-DRAIN OUTPUTS

Features «WideSupplyVoltageRangeFrom1.65VTo5.5V. InputsCanBeDrivenFromEither 3.3Vor5VDevices. ®+24-mAOutputDriveat3.3V «LowPowerDissipation:Ptot=300mW(Max) »ESDProtectionExceedsJESD22 -2000-VHuman-BodyModel(A114-A) =200-VMachineModel(A115-A) -10

TRS20H120H

Marking：S20H120H；Package：TO-247-2L；SiC Schottky Barrier Diode

Applications •PowerFactorCorrection •SolarInverters •UninterruptiblePowerSupplies •DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF=1.27V(typ.) (3)Lowtotalcapacitivecharge:Qc=109nC(typ.) (4)Lowreversecurrent:IR=2.0μA(ty

TRS20N120HB

Marking：S20N120HB；Package：TO-247；SiC Schottky Barrier Diode

Applications •PowerFactorCorrection •SolarInverters •UninterruptiblePowerSupplies •DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF(PerLeg)=1.27V(typ.) (3)Lowtotalcapacitivecharge:Qc(PerLeg)=57nC(typ.) (4)Lowreversecurre

8P34S2102NLGI

Marking：S202I；Package：VFQFN；Dual 1:2 LVDS Output 1.8V Fanout