丝印：S2000AFPackage：ISOWATT218FX；High voltage NPN Power transistor for standard Definition CRT display

Features ■ State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable performances versus operating temperature variation ■ Low base-drive requirement ■ Tigh hFE range at operating collector current ■ High ruggedness ■ Fully insulated power package U.L. compliant ■ I

文件：99.39 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

丝印：S2080.02 to 2.7 GHz 50 W High Power Silicon PIN Diode SPDT Switch

Applications  Transmit/receive and fail-safe switching in land mobile radios, public safety radios, and military communication systems Features  High power handling: 50 W CW, 300 W peak  Low insertion loss: 0.3 dB typical  Controlled with positive power supply  High antenna to receiv

文件：1.84346 Mbytes 页数：22 Pages

SKYWORKS

思佳讯

丝印：S2090.9 to 4.0 GHz 40 W High Power Silicon PIN Diode SPDT Switch

Applications  Transmit/receive switching and RF path switching in TD-SCDMA, WiMAX, and LTE base stations  Transmit/receive and RF path switching in land mobile radios and military communication systems Features  High power handling: 40 W CW  Low insertion loss: 0.3 dB typical  High

文件：1.36648 Mbytes 页数：15 Pages

SKYWORKS

思佳讯

丝印：S2030Package：DSN1608-2L；Surface Mount Schottky Barrier Rectifier

Features  Chip scale package(H

文件：272.21 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：S204Package：SOT23-6；DUAL INVERTER GATE

Features » Operation voltage range: 1.65~5.5 » Inputs Accept Voltages up to 5.5 V Allowing Down Translation to VCC « £24mA output drive (VCC=3.3V) « Low Power Consumption, 10-pA Max ICC » ESD Protection Exceeds JESD 22 ~2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) ~1000-

文件：3.52447 Mbytes 页数：7 Pages

TECHPUBLIC

台舟电子

丝印：S206Package：SOT23-6；INVERTERS WITH OPEN-DRAIN OUTPUTS

Features » Operate from 1.65V to 5.5V « Input and Open-Drain Output Accept Voltages to 5.5V « High Noise Immunity » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charged-Device Model (C101)

文件：4.72625 Mbytes 页数：8 Pages

TECHPUBLIC

台舟电子

丝印：S207Package：SOT23-6；BUFFERS WITH OPEN-DRAIN OUTPUTS

Features « Wide Supply Voltage Range From 1.65V To 5.5V. Inputs Can Be Driven From Either 3.3V or 5V Devices. ® +24-mA Output Drive at 3.3 V «Low Power Dissipation: Ptot =300mW(Max) » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) = 200-V Machine Model (A115-A) -10

文件：4.63235 Mbytes 页数：8 Pages

TECHPUBLIC

台舟电子

丝印：S20H120HPackage：TO-247-2L；SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.27 V (typ.) (3) Low total capacitive charge: Qc = 109 nC (typ.) (4) Low reverse current: IR = 2.0 μA (ty

文件：445.57 Kbytes 页数：7 Pages

TOSHIBA

东芝

丝印：S20N120HBPackage：TO-247；SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF (Per Leg) = 1.27 V (typ.) (3) Low total capacitive charge: Qc (Per Leg) = 57 nC (typ.) (4) Low reverse curre

文件：450.26 Kbytes 页数：7 Pages

TOSHIBA

东芝

丝印：S202IPackage：VFQFN；Dual 1:2 LVDS Output 1.8V Fanout

文件：423.35 Kbytes 页数：17 Pages

IDT

Integrated Device Technology, Inc.