15 V low VCE(sat) NPN double transistor

DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High

文件：149.1 Kbytes 页数：9 Pages

恩XP

15 V low VCEsat NPN double transistor

DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High

文件：69.97 Kbytes 页数：12 Pages

PHI

飞利浦

15 V low VCE(sat) NPN/PNP transistor

DESCRIPTION NPN/PNP low VCEsat transistor pair in a SC-88 plastic package. FEATURES • Low collector-emitter saturation voltage • High current capability • Replaces two SC-70 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APP

文件：99.38 Kbytes 页数：11 Pages

PHI

飞利浦

15 V low VCE(sat) NPN/PNP transistor

DESCRIPTION NPN/PNP low VCEsat transistor pair in a SC-88 plastic package. FEATURES • Low collector-emitter saturation voltage • High current capability • Replaces two SC-70 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APP

文件：363.27 Kbytes 页数：11 Pages

恩XP

丝印：N8；Package：TSSOP6；15 V low VCEsat NPN/PNP transistor

1. General description NPN/PNP low VCEsat transistor pair in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. . 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Replaces two SC-70 packaged low VCEsat transistors on sam

文件：266.51 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：N8；Package：TSSOP6；15 V low VCEsat NPN/PNP transistor

1. General description NPN/PNP low VCEsat transistor pair in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. . 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Replaces two SC-70 packaged low VCEsat transistors on sam

文件：243.94 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

15 V low VCE(sat) NPN/PNP transistor

文件：174.17 Kbytes 页数：11 Pages

恩XP

15 V, 0.5 A NPN low VCEsat (BISS) transistor

恩XP

恩智浦

15 V low VCEsat NPN transistor

恩XP

恩智浦

Package：SC-101，SOT-883；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 15V 0.5A SOT883

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司