丝印：N8；Package：SOT666；15 V low VCE(sat) NPN/PNP transistor

FEATURES •300 mW total power dissipation •Very small 1.6 × 1.2 mm ultra thin package •Excellent coplanarity due to straight leads •Low collector-emitter saturation voltage •High current capability •Improved thermal behaviour due to flat lead •Replaces two SC75/SC89 packaged low VCEsat trans

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NEXPERIA

安世

15 V low VCE(sat) NPN/PNP transistor

文件：174.17 Kbytes 页数：11 Pages

恩XP

15 V low VCEsat NPN/PNP transistor

NPN/PNP low VCEsat transistor pair in a SOT666 plastic package. • 300 mW total power dissipation\n• Very small 1.6 x 1.2 mm ultra thin package\n• Excellent coplanarity due to straight leads\n• Low collector-emitter saturation voltage\n• High current capability\n• Improved thermal behaviour due to flat lead\n• Replaces two SC75/SC89 packaged low VCEsat transistor;

Nexperia

安世

15 V low VCE(sat) NPN/PNP transistor

恩XP