PBSS2515VPN中文资料15 V low VCEsat NPN/PNP transistor数据手册Nexperia规格书

描述 Description

NPN/PNP low VCEsat transistor pair in a SOT666 plastic package.

特性 Features

• 300 mW total power dissipation
• Very small 1.6 x 1.2 mm ultra thin package
• Excellent coplanarity due to straight leads
• Low collector-emitter saturation voltage
• High current capability
• Improved thermal behaviour due to flat lead
• Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area
• Reduces required PCB area
• Reduced pick and place costs.
• AEC-Q101 qualified

应用 Application

• General purpose switching and muting
• Low frequency driver circuits
• LCD backlighting
• Audio frequency general purpose amplifier applications
• Battery driven equipment (mobile phones, video cameras and hand-held devices).