Power MOSFET 6 A, 20 V, P?묬hannel SOIC??, Dual

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Power MOSFET

文件：87.46 Kbytes 页数：6 Pages

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Power MOSFET 6 Amps, 20 Volts P-Channel SO-8, Dual

文件：124.15 Kbytes 页数：8 Pages

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Power MOSFET

文件：87.46 Kbytes 页数：6 Pages

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Power MOSFET 6 A, 20 V, P?묬hannel SOIC??, Dual

文件：124.2 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：87.46 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET 6 A, 20 V, P?묬hannel SOIC??, Dual

文件：124.2 Kbytes 页数：6 Pages

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双 N 沟道，增强模式功率 MOSFET，20V，6.5A，35mΩ

Power MOSFET 6.0 Amps, 20 Volts N−Channel Enhancement Mode Dual SO−8 Package • Ultra Low RDS(on)\n• Higher Efficiency Extending Battery Life\n• Logic Level Gate Drive\n• Miniature Dual SO-8 Surface Mount Package\n• Diode Exhibits High Speed, Soft Recovery\n• Avalanche Energy Specified\n• SO-8 Mounting Information Provided;

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功率 MOSFET，30V，6A，32mΩ，双 N 沟道，SO-8

Power MOSFET 30 V, 6 A, Dual N-Channel SOIC-8 • Designed for use in low voltage, high speed switching applications\n• Ultra Low Rds(on) Provides Higher Efficiency and Extends Battery Life - Rds(on) = 0.024 Ω, VGS = 10 V (Typ) - Rds(on) = 0.030 Ω, VGS = 4.5 V (Typ)\n• Miniature SO-8 Surface Mount Package Saves Board Space\n• Diode is Characteriz;

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功率 MOSFET，40V，4.6A，34mΩ，双 N 沟道，SO-8

NTMD6N04R2G，40V，6.0A，双 N 沟道，SOIC-8 • Designed for use in Low Voltage High Speed switching applications.\n• Low RDS(on)\n• SOIC-8 Surface Mount Package;

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