MOSFET – Power, Dual N-Channel, SOIC-8 40 V, 5.8 A

Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 , VGS = 10 V (Typ) − RDS(on) = 0.034 , VGS = 4.5 V (Typ) • Miniature SOIC−8 Surface Mount Package Saves Board Spac

文件：219.31 Kbytes 页数：8 Pages

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MOSFET – Power, Dual N-Channel, SOIC-8 40 V, 5.8 A

Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 , VGS = 10 V (Typ) − RDS(on) = 0.034 , VGS = 4.5 V (Typ) • Miniature SOIC−8 Surface Mount Package Saves Board Spac

文件：219.31 Kbytes 页数：8 Pages

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安森美半导体

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文件：100.66 Kbytes 页数：6 Pages

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文件：71.29 Kbytes 页数：6 Pages

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文件：80.25 Kbytes 页数：6 Pages

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文件：80.25 Kbytes 页数：6 Pages

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文件：80.25 Kbytes 页数：6 Pages

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文件：983.82 Kbytes 页数：7 Pages

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文件：343.11 Kbytes 页数：8 Pages

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文件：74.75 Kbytes 页数：8 Pages

ONSEMI

安森美半导体