MISCELLAMEOUS INTEGRATED CIRCUITS

[NTE-Electronic]

文件：32.11 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

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N-Channel High Voltage Mode Field Effect Transistor

文件：202.84 Kbytes 页数：4 Pages

NIKOSEM

尼克森

Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：431.21 Kbytes 页数：5 Pages

PANJIT

強茂

Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Low Switching Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  PFC, UPS, PV

文件：426.3 Kbytes 页数：5 Pages

PANJIT

強茂