Integrated Circuit 6−Stage Darlington Transistor Array w/Clamp Diode

Description: The NTE2077is a six−circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high−current driving with extremely low input−current supply. Features: • High breakdown voltage (BVCEO ≥ 40V)

文件：78.61 Kbytes 页数：2 Pages

NTE

Integrated Circuit 6−Stage Darlington Transistor Array w/Clamp Diode

Description:\nThe NTE2077is a six−circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high−current driving with extremely low input−current supply.Features:\n• High breakdown voltage (BVCEO ≥ 40V)\n• H

NTE

2 GHz image rejecting front-end

文件：140.97 Kbytes 页数：16 Pages

PHI

PHI

Image rejecting front-end for DECT applications

文件：126.78 Kbytes 页数：16 Pages

PHI

PHI

2 GHz image rejecting front-end

文件：69.12 Kbytes 页数：16 Pages

PHI

PHI