Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output

Features: • High Power in a Compact ATR Package: PO = 1W Applications: • Regulated Power Supplies • 1 to 2W Output Stages • Drivers

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NTE

Silicon Complementary Transistors General Purpose Output & Driver

Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications such as series, shunt and switching regulators, and low and high frequency inverters and conv

文件：22.55 Kbytes 页数：2 Pages

NTE

Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns

Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry. Low threshold silicon gate N–Cha

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NTE

Silicon Complementary Transistors General Purpose Output & Driver

Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications such as series, shunt and switching regulators, and low and high frequency inverters and conv

文件：22.55 Kbytes 页数：2 Pages

NTE

Integrated Circuit NMOS, 128K (16K x 8) UV EPROM

Description: The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be wr

文件：37.71 Kbytes 页数：6 Pages

NTE

262,144-Bit Dynamic Random Access Memory (DRAM)

Description: The NTE21256 is a 262,144 word by 1–bit dynamic Random Access Memory. This 5V–only component is fabricated with N–channel silicon gate technology. Nine multiplexed address inputs permit the NTE21256 to be packaged in an industry standard 16–Lead DIP package. Features of this dev

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NTE

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

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NTE

Silicon NPN Transistor Darlington Driver

Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers. Features: • High DC Current Gain • Large Current Capacity and Wide ASO •

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NTE

Silicon NPN Transistor Darlington Driver

Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications in clude motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers. Features: • High DC Current Gain • Large Current Capacity and Wide ASO

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NTE

Silicon PNP Transistor Audio Power Output

Description: The NTE218 is ideal for use as a driver, switch and medium–power amplifier applications. This device features: Features: • Low Saturation Voltage – 0.6VCE(sat) @ IC = 1A • High Gain Characteristics – hFE @ IC = 250mA: 30–100 • Excellent Safe Area Limits

文件：23.59 Kbytes 页数：2 Pages

NTE