MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 页数：1 Pages

NTE

Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns

Description:\nThe NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry.\nLow threshold silicon gate N–Channel t

NTE

Integrated Circuit NMOS, 128K (16K x 8) UV EPROM

Description:\nThe NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be writte

NTE

Complementary Transistors

NTE