NTE2102中文资料Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns数据手册NTE规格书
NTE2102规格书详情
描述 Description
Description:
The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry.
Low threshold silicon gate N–Channel technology allows complete DTL/TTL compatibility of all inputs and outputs as well as a single 5V supply. The separate chip enable input (CE) controlling the output allows easy memory expansion by OR–tying individual devices to a data bus. Data in and data out have the same polarity.Features:
• Single 5V Supply
• All Inputs and Outputs Directly DTL/TTL Compatible
• Static Operation – No Clocks or Refresh
• All Inputs Protected Against Static Charge
• 350ns Access Time
技术参数
- 型号：
NTE2102
- 制造商：
NTE Electronics
- 功能描述：
IC-MOS 1K SRAM
- 功能描述：
IC, SRAM, 1KBIT, SERIAL, 350NS, 16-DIP; Memory
- Size：
1Kbit; Memory
- Configuration：
1K x 1; Supply Voltage
- Min：
4.75V; Supply Voltage
- Max：
5.25V; Memory Case
- Style：
DIP; No. of
- Pins：
16; Access
- Time：
350ns; Operating Temperature
- Min：
0C
- 功能描述：
SRAM Chip Async Single 5V 1K-Bit 1K x 1 350ns 16-Pin PDIP
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
原装 |
1923+ |
TO-3P |
8900 |
公司原装现货特价长期供货欢迎来电咨询 |
询价 | ||
NTE |
23+ |
65480 |
询价 | ||||
NTE |
23+ |
TO-3 |
39250 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
24+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
SANYO/三洋 |
24+ |
TO-3P |
39197 |
郑重承诺只做原装进口现货 |
询价 | ||
SANYO |
24+ |
TO-3P |
36500 |
原装现货/放心购买 |
询价 | ||
OTAX |
DIP-3 |
35560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
OTAX |
24+ |
NA |
8600 |
正品原装,正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
OTAX |
23+ |
NA |
20000 |
全新原装假一赔十 |
询价 | ||
新 |
37 |
全新原装 货期两周 |
询价 |
