Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns

Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry. Low threshold silicon gate N–Cha

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Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns

Description:\nThe NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry.\nLow threshold silicon gate N–Channel t

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