Silicon Power Transistor Audio Power Amp, Medium Speed Switch

Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications. Features: • DC Current Gain: hFE = 20 – 70 @ IC = 4A • Collector–Emitter Saturation Voltage: VCE(sat) = 1.1V (Max

文件：24.88 Kbytes 页数：2 Pages

NTE

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 页数：1 Pages

NTE

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 页数：1 Pages

NTE

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 页数：1 Pages

NTE

Integrated Circuit MOS, Static 4K RAM, 300ns

文件：29.02 Kbytes 页数：4 Pages

NTE

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 页数：1 Pages

NTE

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 页数：1 Pages

NTE

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 页数：1 Pages

NTE

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 页数：1 Pages

NTE

Silicon NPN Transistor High Speed Switch, Core Driver

文件：19.46 Kbytes 页数：2 Pages

NTE