Integrated Circuit NMOS, 128K (16K x 8) UV EPROM

Description: The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be wr

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NTE

Integrated Circuit NMOS, 128K (16K x 8) UV EPROM

Description:\nThe NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be writte

NTE

SOT223

ON

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TO-247

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