丝印：CDH2065CCGB；Package：TO-247AD-3LD；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：431.21 Kbytes 页数：5 Pages

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碳化硅肖特基二极管

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Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Low Switching Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  PFC, UPS, PV

文件：426.3 Kbytes 页数：5 Pages

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Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：332.65 Kbytes 页数：5 Pages

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Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Low Switching Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  PFC, UPS, PV

文件：331.05 Kbytes 页数：5 Pages

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