isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.165Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.3 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET 12 Amps, 100 Volts N?묬hannel Enhancement?묺ode DPAK

文件：77.77 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 12 Amps, 100 Volts

文件：148.34 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET, 12 A, 100 V

• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.\n• IDSS and RDS(on) Specified at Elevated Temperature\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.165Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：277.84 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET 12 Amps, 100 Volts N?묬hannel Enhancement?묺ode DPAK

文件：77.77 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel 100 V (D-S) MOSFET

文件：974.5 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Power MOSFET 12 Amps, 100 Volts

文件：148.34 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 12 Amps, 100 Volts

文件：148.34 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel 100 V (D-S) MOSFET

文件：1.01012 Mbytes 页数：7 Pages

VBSEMI

微碧半导体