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NTD20N06-1G

Power MOSFET

Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total

文件:80.12 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

NTD20N06-1G

N-Channel 60 V (D-S) MOSFET

文件:960.08 Kbytes 页数:7 Pages

VBSEMI

微碧半导体

NTD20N06-1

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 46mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:277.65 Kbytes 页数:2 Pages

ISC

无锡固电

NTD20N06-1

Power MOSFET

Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total

文件:80.12 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

详细参数

  • 型号:

    NTD20N06-1G

  • 功能描述:

    MOSFET 60V 20A N-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ON
24+
DPAK3(SINGLEGAUGE
8866
询价
ON
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
询价
ON
6000
面议
19
DIP/SMD
询价
三年内
1983
只做原装正品
询价
ST/意法
23+
TO-252
69820
终端可以免费供样,支持BOM配单!
询价
ON
24+
NA
3000
进口原装 假一罚十 现货
询价
VB
21+
TO251
10000
原装现货假一罚十
询价
ON Semiconductor
2022+
TO-251-3 短引线,IPak,TO-251A
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
onsemi
21+
4
只做原装,优势渠道 ,欢迎实单联系
询价
ON/安森美
2406+
SOP/DIP
3699
优势代理渠道,原装现货,可全系列订货
询价
更多NTD20N06-1G供应商 更新时间2025-11-19 15:30:00