Power MOSFET

文件：79.98 Kbytes 页数：8 Pages

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Power MOSFET 18 Amps, 60 Volts

文件：157.38 Kbytes 页数：9 Pages

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Power MOSFET 18 Amps, 60 Volts

文件：168.38 Kbytes 页数：9 Pages

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功率 MOSFET，60V，18A，60mΩ，单 N 沟道，DPAK

适用于电源、转换器、功率电机控制和桥式电路中的低压高速开关应用。 • Pb-Free Packages are Available;

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：334.95 Kbytes 页数：3 Pages

ISC

无锡固电

Power MOSFET 18 A, 60 V, Logic Level N.Channel DPAK

MOSFET – Power, N-Channel, Logic Level, DPAK 18 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV18N06L • These Devices are Pb−Free and are RoHS Compliant Typical

文件：169.03 Kbytes 页数：8 Pages

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安森美半导体

Power MOSFET

MOSFET – Power, N-Channel, Logic Level, DPAK 18 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV18N06L • These Devices are Pb−Free and are RoHS Compliant Typical

文件：92.06 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET

MOSFET – Power, N-Channel, Logic Level, DPAK 18 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV18N06L • These Devices are Pb−Free and are RoHS Compliant Typical

文件：92.06 Kbytes 页数：7 Pages

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N-channel Enhancement Mode Power MOSFET

Features • VDS= 60V, ID= 30A RDS(ON)

文件：763.31 Kbytes 页数：4 Pages

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百域芯

Power MOSFET 18 Amps, 60 Volts

文件：168.38 Kbytes 页数：9 Pages

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