Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

文件：60.26 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

文件：212.67 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.31 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

文件：1.01525 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

Power MOSFET

文件：100.86 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

单 N 沟道逻辑电平功率 MOSFET 30V，20A，27mΩ

This logic level vertical power MOSFET is a general purpose part that provides the \"best of design\" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. • Ultra-Low RDS(on) , Single Base, Advanced Technology\n• SPICE Parameters Available\n• Diode is Characterized for Use in Bridge Circuits\n• IDSS and VDS(on) Specified at Elevated Temperature\n• High Avalanche Energy Specified\n• ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0\n• RoHS Compliant;

ONSEMI

安森美半导体

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

文件：212.67 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：278.87 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

文件：60.26 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

文件：60.26 Kbytes 页数：6 Pages

ONSEMI

安森美半导体