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NTD20N06LT4G

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

文件:272.53 Kbytes 页数:9 Pages

ONSEMI

安森美半导体

NTD20N06LT4G

60V N-Channel MOSFET

Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits VDS ID (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 20A

文件:462.09 Kbytes 页数:7 Pages

UMW

友台半导体

NTD20N06LT4G

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

文件:763.3 Kbytes 页数:4 Pages

BYCHIP

百域芯

NTD20N06LT4G

60V N-Channel MOSFET

Features VDS 60V ID (at VGS=10V) 20A RDS(ON) (at VGS=4.5V)

文件:377.04 Kbytes 页数:7 Pages

EVVOSEMI

翊欧

NTD20N06LT4G

N-Channel 6 0-V (D-S) MOSFET

文件:897.25 Kbytes 页数:6 Pages

VBSEMI

微碧半导体

NTD20N06LT4G

Power MOSFET 20 Amps, 60 Volts Logic Level, N?묬hannel DPAK

文件:128.039 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

NTD20N06LT4G

Power MOSFET

文件:127.87 Kbytes 页数:8 Pages

ONSEMI

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详细参数

  • 型号:

    NTD20N06LT4G

  • 功能描述:

    MOSFET 60V 20A N-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ON/安森美
25+
TO-252
37728
ON/安森美全新特价NTD20N06LT4G即刻询购立享优惠#长期有货
询价
ON
15+
原厂原装
5000
进口原装现货假一赔十
询价
ON
SOT-252
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
ON
16+/17+
TO-252
3500
原装正品现货供应56
询价
ON
21+
TO252-3
10000
十年信誉,只做原装,有挂就有现货!
询价
ON
23+
TO-252
2500
正规渠道,只有原装!
询价
UMW 友台
23+
TO-252
10000
原装正品,实单请联系
询价
ON/安森美
22+
TO-252
10000
原装正品
询价
ONSEMI
2025
7500
询价
ON
25+
TO-252
6000
全新原装现货、诚信经营!
询价
更多NTD20N06LT4G供应商 更新时间2026-1-31 17:25:00