RF & Microwave device

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RENESAS

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NPN SILICON GERMANIUM RF TRANSISTOR

FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz • MSG (Maximum Stable Gain) = 23 dB TYP. @ VCE = 6 V, Ic = 100 mA, f = 460 MHz • Using UHS2-HV pr

文件：326.88 Kbytes 页数：14 Pages

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瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz • MSG (Maximum Stable Gain) = 23 dB TYP. @ VCE = 6 V, Ic = 100 mA, f = 460 MHz • Using UHS2-HV pr

文件：326.88 Kbytes 页数：14 Pages

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NPN SILICON GERMANIUM RF TRANSISTOR

文件：362.92 Kbytes 页数：11 Pages

CEL

3-PIN POWER MINIMOLD

文件：252.15 Kbytes 页数：4 Pages

NEC

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