HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz • High associated gain: Ga = 16 dB TYP. @ f = 2 GHz • Gate width: Wg = 400 mm • 4-pin super minimold package • Tape & reel packaging only available

文件：250.2 Kbytes 页数：18 Pages

RENESAS

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GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

DESCRIPTION NECs NE34018 is a low cost gallium arsenide Hetero-Junction FET housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small size a

文件：200.1 Kbytes 页数：10 Pages

CEL

L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 2 GHz • High associated gain Ga = 16 dB TYP. at f = 2 GHz • Gate width: Wg = 400 μm • 4 pins super mini mold • Tape & reel packaging only available

文件：114.81 Kbytes 页数：16 Pages

NEC

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz • High associated gain: Ga = 16 dB TYP. @ f = 2 GHz • Gate width: Wg = 400 mm • 4-pin super minimold package • Tape & reel packaging only available

文件：250.2 Kbytes 页数：18 Pages

RENESAS

瑞萨

L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 2 GHz • High associated gain Ga = 16 dB TYP. at f = 2 GHz • Gate width: Wg = 400 μm • 4 pins super mini mold • Tape & reel packaging only available

文件：114.81 Kbytes 页数：16 Pages

NEC

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz • High associated gain: Ga = 16 dB TYP. @ f = 2 GHz • Gate width: Wg = 400 mm • 4-pin super minimold package • Tape & reel packaging only available

文件：250.2 Kbytes 页数：18 Pages

RENESAS

瑞萨

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

DESCRIPTION NECs NE34018 is a low cost gallium arsenide Hetero-Junction FET housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small size a

文件：200.1 Kbytes 页数：10 Pages

CEL

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

DESCRIPTION NECs NE34018 is a low cost gallium arsenide Hetero-Junction FET housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small size a

文件：200.1 Kbytes 页数：10 Pages

CEL

HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems

文件：269.44 Kbytes 页数：8 Pages

CEL

HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems

文件：223.26 Kbytes 页数：11 Pages

RENESAS

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