L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 2 GHz • High associated gain Ga = 16 dB TYP. at f = 2 GHz • Gate width: Wg = 400 μm • 4 pins super mini mold • Tape & reel packaging only available

文件：114.81 Kbytes 页数：16 Pages

NEC

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz • High associated gain: Ga = 16 dB TYP. @ f = 2 GHz • Gate width: Wg = 400 mm • 4-pin super minimold package • Tape & reel packaging only available

文件：250.2 Kbytes 页数：18 Pages

RENESAS

瑞萨

Package：SC-82A，SOT-343；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 4V 2GHZ SOT-343

CEL

Package：SC-82A，SOT-343；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 4V 2GHZ SOT-343

CEL

Package：SC-82A，SOT-343；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 4V 2GHZ SOT-343

CEL