CABLE CLAMPS, PLASTISOL DIPPED

文件：39.06 Kbytes 页数：1 Pages

RICHCO

Near edge thermal printhead (300 dots / inch)

The NE3004-VA10A is a near edge thin-film thermal printhead where the printing medium passes straight through. This printhead is capable of printing speeds up to 8 inch / second and is suited for label printers. Features 1) Inclined toward the printing surface to provide excellent printing quali

文件：224.99 Kbytes 页数：5 Pages

ROHM

罗姆

HETERO JUNCTION FIELDEFFECT TRANSISTOR

DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & High

文件：215.03 Kbytes 页数：14 Pages

RENESAS

瑞萨

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION NECs NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications. NECs stringe

文件：141.29 Kbytes 页数：6 Pages

CEL

C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & Hi

文件：48.78 Kbytes 页数：12 Pages

NEC

瑞萨

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain

文件：62.71 Kbytes 页数：16 Pages

NEC

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TY

文件：197.14 Kbytes 页数：18 Pages

RENESAS

瑞萨

丝印：K；HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TY

文件：197.14 Kbytes 页数：18 Pages

RENESAS

瑞萨

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain

文件：62.71 Kbytes 页数：16 Pages

NEC

瑞萨

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain

文件：62.71 Kbytes 页数：16 Pages

NEC

瑞萨