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型号	下载订购	功能描述	制造商上传企业	LOGO
NE3210S01-T1	文件：62.71 Kbytes Page：16 Pages	X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain 文件：62.71 Kbytes 页数：16 Pages	NEC 瑞萨	NEC
NE3210S01-T1	文件：197.14 Kbytes Page：18 Pages	丝印：K；HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TY 文件：197.14 Kbytes 页数：18 Pages	RENESAS 瑞萨	RENESAS
NE3210S01-T1	文件：414.97 Kbytes Page：7 Pages	SUPER LOW NOISE HJ FET 文件：414.97 Kbytes 页数：7 Pages	CEL	CEL
NE3210S01-T1B	文件：62.71 Kbytes Page：16 Pages	X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain 文件：62.71 Kbytes 页数：16 Pages	NEC 瑞萨	NEC
NE3210S01-T1B	文件：197.14 Kbytes Page：18 Pages	丝印：K；HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TY 文件：197.14 Kbytes 页数：18 Pages	RENESAS 瑞萨	RENESAS
NE3210S01-T1B	文件：414.97 Kbytes Page：7 Pages	SUPER LOW NOISE HJ FET 文件：414.97 Kbytes 页数：7 Pages	CEL	CEL
NE3210S01-T1B	文件：100 bytes Page：1 Pages	Package：4-SMD；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带类别：分立半导体产品晶体管 - FET，MOSFET - 射频描述：FET RF 4V 12GHZ S01	CEL	CEL

详细参数

型号：
NE3210S01-T1
制造商：
Renesas Electronics Corporation
制造商：
Renesas Electronics Corporation
功能描述：
RF SMALL SIGNAL TRANSISTOR HFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	NE3210S01-T1	NEC	2016+	SMT-86	2500	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市毅创腾电子科技有限公司	NE3210S01-T1	NEC		SMT-86	157	正品原装--自家现货-实单可谈	询价
深圳市华来深电子有限公司	NE3210S01-T1	NEC	23+	SMT86	8650	受权代理!全新原装现货特价热卖!	询价
深圳市振宏微科技有限公司	NE3210S01-T1	SZJ	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市华睿芯科技有限公司	NE3210S01-T1	NEC	24+	SMT86	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
京海半导体(深圳)有限公司	NE3210S01-T1	NEC	21+	SO36	10000	原装现货假一罚十	询价
标准国际(香港)有限公司	NE3210S01-T1	NE3210S01-T1	25+	125	125		询价
深圳市晨豪科技有限公司	NE3210S01-T1	NEC/RENESAS瑞萨	23+	SO36	89630	当天发货全新原装现货	询价
深圳市润联芯城科技有限公司	NE3210S01-T1	NEC	22+	SMT-86	30000	只做原装正品	询价
深圳市纳艾斯科技有限公司	NE3210S01-T1	NEC	24+	SMT86	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价

更多NE3210S01-T1供应商更新时间2025-11-19 22:58:00

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