C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & Hi

文件：48.78 Kbytes 页数：12 Pages

NEC

瑞萨

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION NECs NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications. NECs stringe

文件：141.29 Kbytes 页数：6 Pages

CEL

HETERO JUNCTION FIELDEFFECT TRANSISTOR

DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & High

文件：215.03 Kbytes 页数：14 Pages

RENESAS

瑞萨

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

文件：135.99 Kbytes 页数：6 Pages

CEL

C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

Renesas

瑞萨

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

文件：135.99 Kbytes 页数：6 Pages

CEL