| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NE32984D | HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.40 文件：207.1 Kbytes 页数：14 Pages | RENESAS 瑞萨 | RENESAS | |
NE32984D | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET 文件：51.12 Kbytes 页数：4 Pages | NEC 瑞萨 | NEC | |
丝印：K；HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.40 文件：207.1 Kbytes 页数：14 Pages | RENESAS 瑞萨 | RENESAS | ||
丝印：K；HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.40 文件：207.1 Kbytes 页数：14 Pages | RENESAS 瑞萨 | RENESAS | ||
丝印：K；HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.40 文件：207.1 Kbytes 页数：14 Pages | RENESAS 瑞萨 | RENESAS | ||
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET 文件：51.12 Kbytes 页数：4 Pages | NEC 瑞萨 | NEC | ||
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET 文件：51.12 Kbytes 页数：4 Pages | NEC 瑞萨 | NEC | ||
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET 文件：51.12 Kbytes 页数：4 Pages | NEC 瑞萨 | NEC | ||
NE32984D | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET | Renesas 瑞萨 | Renesas |
详细参数
- 型号：
NE32984D
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
SMT84 |
246 |
现货供应 |
询价 | ||
NEC |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
NEC |
21+ |
SMT-84 |
10000 |
原装现货假一罚十 |
询价 | ||
NEC |
SMT84 |
26 |
询价 | ||||
NEC |
24+ |
NA/ |
4050 |
原装现货,当天可交货,原型号开票 |
询价 | ||
NEC |
24+ |
SMT-84 |
60000 |
全新原装现货 |
询价 | ||
NEC |
23+ |
SMT-84 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
24+ |
2000 |
本站现库存 |
询价 | ||||
NECELECTRON |
24+ |
原厂封装 |
2021 |
原装现货假一罚十 |
询价 | ||
NECELECTRON |
6000 |
面议 |
19 |
DIP/SMD |
询价 |
相关规格书
更多- STC-642-020
- STC68-3C3AK
- STC685K35
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- RGG.0B.302.CLM
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- RGH1608-2C-P-101-B
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相关库存
更多- STC-642-036
- STC68-3C3RK
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- RGG.0B.303.CLM
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- RGH1005-2B-P-332-B
- RGH1608-2C-P-102-B
- XC6124A243MG-G
- XC6124A248ER-G
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- RGP10G/1
- RGP10G/3
- RGP10G/54
- RGP10GE/16
- RGP10GE/3
- XC6501A1517R-G
- XC6501A1817R-G
- XC6501A2517R-G
- XC6501A2817R-G
- XC6501A28A7R-G
- RGP15D/4
- RGP15D-E3/23
- RGP15D-E3/51
- RGP15D-E3/73
- RGP15DHE3/73
- RGP02-14E-E3/1
- RGP02-14E-E3/3
- RGP02-14E-E3/51
- RGP02-14E-E3/54
- RGP02-14EHE3/53
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- PTX-BC2
- PTX-KIT1
- PTX-KIT2
- PTY00A-16-26P
