HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications. FEATURES

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RENESAS

瑞萨

SCHEMATIC

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NEC

瑞萨

SCHEMATIC

Renesas

瑞萨

Propeller Board of Education

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ETCList of Unclassifed Manufacturers

未分类制造商

Industrial Unmanaged 5/8-port 10/100/1000BASE Gigabit Ethernet Switch

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AXIOMTEK

艾讯科技

FIBERS

Features Device type Fibers, fiber suitable for WLL260 For fiber-optic sensor WLL260 Fiber material Glass fiber Jacket material Stainless steel

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SICK

西克