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型号	下载订购	功能描述	制造商上传企业	LOGO
NE33284	文件：62.89 Kbytes Page：10 Pages	L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also 文件：62.89 Kbytes 页数：10 Pages	NEC 瑞萨	NEC
NE33284	文件：54.23 Kbytes Page：5 Pages	SUPER LOW NOISE HJ FET 文件：54.23 Kbytes 页数：5 Pages	CEL	CEL
NE33284	文件：300 bytes Page：1 Pages	L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Renesas 瑞萨	Renesas
NE33284A	文件：62.89 Kbytes Page：10 Pages	L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also 文件：62.89 Kbytes 页数：10 Pages	NEC 瑞萨	NEC
NE33284A-SL	文件：62.89 Kbytes Page：10 Pages	L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also 文件：62.89 Kbytes 页数：10 Pages	NEC 瑞萨	NEC
NE33284A-T1	文件：62.89 Kbytes Page：10 Pages	L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also 文件：62.89 Kbytes 页数：10 Pages	NEC 瑞萨	NEC
NE33284A-T1A	文件：62.89 Kbytes Page：10 Pages	L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also 文件：62.89 Kbytes 页数：10 Pages	NEC 瑞萨	NEC
NE33284A	文件：53.26 Kbytes Page：5 Pages	SUPER LOW NOISE HJ FET 文件：53.26 Kbytes 页数：5 Pages	NEC 瑞萨	NEC
NE33284A_98	文件：53.26 Kbytes Page：5 Pages	SUPER LOW NOISE HJ FET 文件：53.26 Kbytes 页数：5 Pages	NEC 瑞萨	NEC
NE33284AS	文件：53.26 Kbytes Page：5 Pages	SUPER LOW NOISE HJ FET 文件：53.26 Kbytes 页数：5 Pages	NEC 瑞萨	NEC

详细参数

型号：
NE33284
制造商：
NEC
制造商全称：
NEC
功能描述：
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	NE33284A-T1-A	NEC	20+	SMT36	49000	原装优势主营型号-可开原型号增税票	询价
深圳市威尔健半导体有限公司	NE33284A-T1	NEC	23+	SMT	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	NE33284A-T1	NEC	21+	SMT36	10000	原装现货假一罚十	询价
深圳市英瑞尔电子科技有限公司	NE33284A-T1A	NEC	24+	SMT36	598000	原装现货假一赔十	询价
深圳市威雅利发展有限公司	NE33284A-T1-A	NEC	2016+	SMT36	858	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
上海磐岳电子有限公司	NE33284A1	NEC	2023+	SMT36	5800	进口原装,现货热卖	询价
深圳市星宇佳科技有限公司	NE33284A-T1	NEC		SMT36	245		询价
深圳市得捷芯城科技有限公司	NE33284A-T1	NEC	24+	NA/	190	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳深宇韬电子科技有限公司	NE33284A-T1-A	NEC	2023+	SMT36	8800	正品渠道现货终端可提供BOM表配单。	询价
深圳市明嘉莱科技有限公司	NE33284A-T1	NEC	24+	NA	990000	明嘉莱只做原装正品现货	询价

更多NE33284供应商更新时间2025-10-4 9:05:00

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