ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mush

文件：55.54 Kbytes 页数：5 Pages

NEC

瑞萨

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：63.8 Kbytes 页数：12 Pages

NEC

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丝印：T；HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF

文件：195.05 Kbytes 页数：14 Pages

RENESAS

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HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space application

文件：199.18 Kbytes 页数：10 Pages

RENESAS

瑞萨

C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.

文件：39.82 Kbytes 页数：8 Pages

NEC

瑞萨

C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP

DESCRIPTION NECs NE32500 is a Hetero-Junction FET chip that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NECs strin

文件：87.48 Kbytes 页数：3 Pages

CEL

C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP

DESCRIPTION NECs NE32500 is a Hetero-Junction FET chip that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NECs strin

文件：87.48 Kbytes 页数：3 Pages

CEL

C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP

DESCRIPTION NECs NE32500 is a Hetero-Junction FET chip that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NECs strin

文件：87.48 Kbytes 页数：3 Pages

CEL

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：73.54 Kbytes 页数：12 Pages

NEC

瑞萨

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：73.54 Kbytes 页数：12 Pages

NEC

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