NE32500M中文资料CEL数据手册PDF规格书
NE32500M规格书详情
DESCRIPTION
NECs NE32500 is a Hetero-Junction FET chip that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications.
NECs stringent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
• SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz
• HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz
• GATE LENGTH: LG = 0.20 µm
• GATE WIDTH: WG = 200 µm
产品属性
- 型号：
NE32500M
- 制造商：
CEL
- 制造商全称：
CEL
- 功能描述：
C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2023+ |
NA |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
NEC |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
NEC |
24+ |
N/A |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
NEC |
24+ |
20000 |
询价 | ||||
NEC |
24+ |
NA |
60000 |
询价 | |||
NEC(日电电子) |
2405+ |
Original |
50000 |
只做原装优势现货库存,渠道可追溯 |
询价 | ||
24+ |
220 |
现货供应 |
询价 | ||||
NEC |
23+ |
NA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
2450+ |
SMT76 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
询价 | ||
NEC |
24+ |
NA |
5000 |
全新原装正品,现货销售 |
询价 |
