C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.

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NEC

瑞萨

C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP

DESCRIPTION NECs NE32500 is a Hetero-Junction FET chip that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NECs strin

文件：87.48 Kbytes 页数：3 Pages

CEL

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space application

文件：199.18 Kbytes 页数：10 Pages

RENESAS

瑞萨

C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP

CEL

C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP

DESCRIPTION NECs NE32500 is a Hetero-Junction FET chip that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NECs strin

文件：87.48 Kbytes 页数：3 Pages

CEL

C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP

DESCRIPTION NECs NE32500 is a Hetero-Junction FET chip that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NECs strin

文件：87.48 Kbytes 页数：3 Pages

CEL