NCE4606C

Marking：NCE4606C；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET

Description TheNCE4606Cusesadvancedtrenchtechnologytoprovide excellentRDS(ON)andlowgatecharge.Thecomplementary MOSFETsmaybeusedtoformalevelshiftedhighside switch,andforahostofotherapplications. GeneralFeatures ●N-Channel VDS=30V,ID=6A RDS(ON)

PE4606

75OhmBNCMaleRightAngleConnectorClamp/SolderAttachment

PE4606

75OhmBNCMaleRightAngleConnectorClamp-SolderAttachmentForRG11,RG216

PE4606

N-ChanelandP-ChannelMOSFETuseadvancedtrenchtechnology

PJQ4606

30VComplementaryEnhancementModeMOSFET

Features Highswitchingspeed Improveddv/dtcapability LowGateCharge Lowreversetransfercapacitance LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

RN4606

SiliconPNPEpitaxialType(PCTProcess)SiliconNPNEpitaxialType(PCTProcess)

RN4606

SiliconPNPEpitaxialType(PCTProcess)SiliconNPNEpitaxialType(PCTProcess)

S4606ZA

N-andP-Channel30V(D-S)MOSFET

SIR4606DP

N-Channel60V(D-S)MOSFET

FEATURES •TrenchFET®GenIVpowerMOSFET •TunedforthelowestRDS-QossFOM •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Primarysideswitch •Synchronousrectification •DC/DCconverter •Moto

SKKD4606

RectifierDiodeModules