丝印：NCE4606C；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET

Description The NCE4606C uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6A RDS(ON)

文件：1.12682 Mbytes 页数：10 Pages

NCEPOWER

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文件：235.17 Kbytes 页数：3 Pages

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N-Chanel and P-Channel MOSFET use advanced trench technology

文件：2.78555 Mbytes 页数：8 Pages

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