NCE N-Channel Enhancement Mode Power MOSFET

文件：452.68 Kbytes 页数：7 Pages

NCEPOWER

新洁能

N-Channel 60 V (D-S) MOSFET

文件：960.08 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N沟道 MOSFET

NCEPower

新洁能

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching per

文件：376.54 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 35A@ TC=25℃ ·Drain Source Voltage -VDSS= 20V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：306.03 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

文件：62.15 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体