Dual Full-bridge Microstepping PWM Motor Driver

Features ● Dual full bridge for a bipolar stepper motor driver ● Load supply voltage 35V , Output current 0.8A ● Constant current control (Fixed OFF time PWM control) ● 2-bit selectable current level (Full step/Half step/Quarter step) ● Logic supply 3.3V only ● Stand-by function ● Built-in

文件：120.45 Kbytes 页数：5 Pages

SHINDENGEN

1.5 A Switch-Mode Power Supply with Linear Regulator

1.5 A Switch-Mode Power Supply with Linear Regulator The 34701 provides the means to efficiently supply the Freescale Power QUICC™ I, II, and other families of Freescale microprocessors and DSPs. The 34701 incorporates a high performance switching regulator, providing the direct supply for the mi

文件：739.42 Kbytes 页数：38 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

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Motorola

摩托罗拉

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：1.01588 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

文件：257.35 Kbytes 页数：10 Pages

Motorola

摩托罗拉

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand highenergy in the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with

文件：274.88 Kbytes 页数：12 Pages

Motorola

摩托罗拉

TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

文件：293.47 Kbytes 页数：12 Pages

Motorola

摩托罗拉

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

文件：257.35 Kbytes 页数：10 Pages

Motorola

摩托罗拉

TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM

HDTMOS E-FET High Density Power FET DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery

文件：244.94 Kbytes 页数：12 Pages

Motorola

摩托罗拉

TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM

HDTMOS E-FET High Density Power FET DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery

文件：244.94 Kbytes 页数：12 Pages

Motorola

摩托罗拉