TMOS POWER FET 15 AMPERES 60 VOLTS

TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

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Motorola

摩托罗拉

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

文件：179.79 Kbytes 页数：10 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：346.06 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：359.59 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：345.84 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

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ISC

无锡固电

TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design al

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Motorola

摩托罗拉

TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM

TMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E

文件：266.59 Kbytes 页数：10 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：346.55 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design al

文件：269.28 Kbytes 页数：10 Pages

Motorola

摩托罗拉