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MTD1N80E

TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM

ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignal

MotorolaMotorola, Inc

摩托罗拉

Motorola

1N80

1.0Amps,800VoltsN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

1N80

1A,800VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

BRS1N80

N-CHANNELMOSFETinaTO-92PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

D1N80

RectifierDiode

SHINDENGENSHINDENGEN ELECTRIC MANUFACTURING CO.LTD

新电元(上海)电器有限公司

SHINDENGEN

FQD1N80

N-ChannelQFETMOSFET800V,1.0A,20

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD1N80

N-ChannelQFET짰MOSFET800V,1.0A,20廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD1N80

800VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD1N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FQD1N80TF

N-ChannelQFETMOSFET800V,1.0A,20

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD1N80TM

N-ChannelQFET짰MOSFET800V,1.0A,20廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQT1N80

N-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQT1N80TF

N-ChannelMOSFET800V,0.2A,20

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQT1N80TFWS

N-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQU1N80

N-ChannelQFET짰MOSFET800V,1.0A,20廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQU1N80

N-ChannelQFETMOSFET800V,1.0A,20

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQU1N80

800VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQU1N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FQU1N80TU

N-ChannelQFET짰MOSFET800V,1.0A,20廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

HFC1N80

800VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

SEMIHOW

详细参数

  • 型号:

    MTD1N80E

  • 制造商:

    MOTOROLA

  • 制造商全称:

    Motorola, Inc

  • 功能描述:

    TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM

供应商型号品牌批号封装库存备注价格
ON/安森美
22+
5000
只做原装进口 免费送样!!
询价
ON
23+
TO-252
6893
询价
ON
N/A
5000
公司存货
询价
ON
12+
TO-252(DPAK)
15000
全新原装,绝对正品,公司现货供应。
询价
ON
360000
原厂原装
1305
询价
ON
2017+
26589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
23+
N/A
46480
正品授权货源可靠
询价
ON/安森美
专业铁帽
TO-252
4
原装铁帽专营,代理渠道量大可订货
询价
ON/安森美
20+
TO-252
67500
原装优势主营型号-可开原型号增税票
询价
更多MTD1N80E供应商 更新时间2024-4-27 9:24:00