MTD1N40I

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

PHX1N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1.7A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHX1N40

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinafullpackplasticenvelopefeaturinghighavalancheenergycapability,stableoff-statecharacteristics,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitched

PHI

PHX1N40E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1.75A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

MTD2007F

SHINDENGEN
28HSOP