MTD1121F

Unipolar PWM Stepper Motor Driver

Features ●Unipolarsteppermotordriver ●Constantcurrentcontrolfunction（FixedOFFTime） ●Logicsupplyvoltage3.3V ●TTL,CMOScompatibleinput ●4-Phaseinput(SimultaneousONpreventionfunction) ●Built-inflywheeldiodes ●Surfacemountpackagewithheatsink(HSOP28)

MTD1200M3B

The MTD1200M3B is a photo diode in a ceramic package. It is well suited for high reliability and high sensitivity applications.

PeakSensitivityWavelength:925nm TheMTD1200M3Bisaphotodiodeinaceramicpackage.Itiswellsuitedforhighreliabilityandhighsensitivityapplications. FEATURES >VerySmallDarkCurrent >Compact/CeramicPackage >HighReliabilityinDemandingEnvironments APPLICATIONS >Optic

MTD1302

TMOS POWER FET 20 AMPERES 30 VOLTS

HDTMOSE-FETHighDensityPowerFETdpakforSurfaceMount N-ChannelEnhancementModeSiliconGate ThisadvancedHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery

MTD1302T4

N-Channel 30-V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC

MTD1302T4G

N-Channel 30-V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC

MTD1350

Infrared Flat Top Photo Diode

Features Highreliability Lowdarkcurrent Narrowangularresponse Ultrahighspeed Applications Opticalswitches Edgesensing Smokedetectors

MTD1361

Constant Current Control Function (Fixed OFF Time)

Features •Unipolardrivesystem •DMOSoutput(lowlossandLowgenerationofheat) •TTLandCMOScompatiblegate •4-phaseinput(simultaneousONpreventionfunction) •Constantcurrentcontrol •IntegratedflywheeldiodesandnoexternalZenerdiodeneeded •Lowthermalre

MTD1361F

Stepper Motor Driver ICs

Features •ConstantCurrentControlFunction(FixedOFFTime) •4-PhaseInput(SimultaneousONPreventionFunction) •DMOSOutput •Built-inFlywheelDiodes

MTD15N06

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6

MTD15N06

TMOS POWER FET 15 AMPERES 60 VOLTS

TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6