TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

文件：179.79 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 15 AMPERES 60 VOLTS

TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

文件：218.7 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

恩XP

TMOS POWER FET 15 AMPERES 60 VOLTS

TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

文件：218.7 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

文件：179.79 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

Power MOSFET

文件：230.52 Kbytes 页数：8 Pages

ONSEMI

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VBSEMI

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ONSEMI

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文件：273.42 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：273.42 Kbytes 页数：10 Pages

ONSEMI

安森美半导体