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MTD20N06

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

文件:257.35 Kbytes 页数:10 Pages

MOTOROLA

摩托罗拉

MTD20N06

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on)= 0.080 OHM

TMOS V™ Power Field Effect Transistor\nDPAK for Surface Mount\nN-Channel Enhancement-Mode Silicon GateTMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt

恩XP

恩XP

MTD20N06HD

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand highenergy in the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with

文件:274.88 Kbytes 页数:12 Pages

MOTOROLA

摩托罗拉

MTD20N06HDL

TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

文件:293.47 Kbytes 页数:12 Pages

MOTOROLA

摩托罗拉

MTD20N06V

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

文件:257.35 Kbytes 页数:10 Pages

MOTOROLA

摩托罗拉

MTD20N06HD

Power MOSFET 20 Amps, 60 Volts N?묬hannel DPAK

文件:293.59 Kbytes 页数:11 Pages

ONSEMI

安森美半导体

MTD20N06HD-1

Power MOSFET 20 Amps, 60 Volts N?묬hannel DPAK

文件:293.59 Kbytes 页数:11 Pages

ONSEMI

安森美半导体

MTD20N06HDL

Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK

文件:227.27 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MTD20N06HDLT4

Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK

文件:227.27 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MTD20N06HDLT4G

Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK

文件:227.27 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

详细参数

  • 型号:

    MTD20N06

  • 制造商:

    MOTOROLA

  • 制造商全称:

    Motorola, Inc

  • 功能描述:

    TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

供应商型号品牌批号封装库存备注价格
24+
5000
公司存货
询价
ON
12+
TO-252(DPAK)
15000
全新原装,绝对正品,公司现货供应。
询价
ON
17+
TO-252
6200
询价
MOT
25+
TO-252
90000
一级代理商进口原装现货、假一罚十价格合理
询价
ON
25+
TO-252/D-PAK
32500
普通
询价
ON/安森美
23+
SOT-252
50000
全新原装正品现货,支持订货
询价
M
22+
TO-252D
6000
十年配单,只做原装
询价
MOTOROLA
22+
TO-252
3000
原装正品,支持实单
询价
MOT
TO-252
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
MOT
23+
TO-252
2800
正品原装货价格低
询价
更多MTD20N06供应商 更新时间2026-3-9 16:00:00