TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM

HDTMOS E-FET High Density Power FET DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery

文件：244.94 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM

HDTMOS E-FET High Density Power FET DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery

文件：244.94 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

P?묬hannel DPAK Power MOSFET

文件：94.71 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

P?묬hannel DPAK Power MOSFET

文件：94.71 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

P?묬hannel DPAK Power MOSFET

文件：94.71 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

P?묬hannel DPAK Power MOSFET

文件：94.71 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

P?묬hannel DPAK Power MOSFET

文件：94.71 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

P?묬hannel DPAK Power MOSFET

文件：94.71 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

P-Channel 30-V (D-S) MOSFET

文件：1.01501 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM

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