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MTD20P03HDL规格书详情
HDTMOS E-FET High Density Power FET DPAK for Surface Mount
P–Channel Enhancement–Mode Silicon Gate
This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
产品属性
- 型号:
MTD20P03HDL
- 制造商:
MOTOROLA
- 制造商全称:
Motorola, Inc
- 功能描述:
TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
M |
23+ |
TO-252 |
6000 |
原装正品,支持实单 |
询价 | ||
ON/安森美 |
23+ |
NA/ |
300 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ON/安森美 |
21+ |
TO-252 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
ON(安森美) |
23+ |
NA |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
ON/安森美 |
2227+ |
TO252 |
5265 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
VBsemi/台湾微碧 |
TO-252 |
39449 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
VBsemi/台湾微碧 |
21+ |
TO-252 |
15445 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ON |
22+ |
TO-252 |
3000 |
原装正品,支持实单 |
询价 |