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MTD20N03HDL中文资料PDF规格书
MTD20N03HDL规格书详情
HDTMOS E-FET™ Power Field Effect Transistor
DPAK for Surface Mount
N-Channel Enhancement-Mode Silicon Gate
This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits, and inductive loads. The avalanche energy capability is specified to eliminate the guess work in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSSand VDS(on)Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
• Available in Insertion Mount, Add –1 or 1 to Part Number
产品属性
- 型号:
MTD20N03HDL
- 制造商:
ON Semiconductor
- 功能描述:
Trans MOSFET N-CH 30V 20A 3-Pin(2+Tab) DPAK Rail
- 功能描述:
MOSFET N LOGIC D-PAK
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOT |
23+ |
NA |
20000 |
全新原装假一赔十 |
询价 | ||
ON/安森美 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ON/安森美 |
24+ |
TO-252 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
VBsemi |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
VBsemi |
24+ |
TO252 |
2983 |
询价 | |||
ON |
TO-252 |
22+ |
10000 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
ON |
2020+ |
TO252 |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
ON |
SOT252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
ON/ON Semiconductor/安森美/安 |
21+ |
TO-252 |
375 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ON(安森美) |
23+ |
NA |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 |