RF Power Field Effect Transistors

文件：581.63 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：452.02 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Single W-CDMA Lateral N-Channel RF Power MOSFET, 850-895 MHz, 70 W Avg., 28 V

The MRF8S8260HR3 and MRF8S8260HSR3 are designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 70 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.FrequencyGps(dB)ηD(%)Output PAR(dB)ACPR(dBc)850 MHz21.336.26.5–37.0875 MHz21.437.46.3–3;

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RF Power Field Effect Transistors

文件：452.02 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体