RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line
 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them

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Motorola

摩托罗拉

TO-272

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

TO-272

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

SOT143

ON

上传：深圳市英科美电子有限公司

TO270-2

FREESCAL

上传：深圳市正纳电子有限公司