RF Power Field Effect Transistor

The RF MOSFET Line RF Power Field Effect Transistor N- Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large- signal,

文件：481.15 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

880 MHz, 200 W, 26 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line\nRF Power Field Effect Transistor\nN- Channel Enhancement - Mode Lateral MOSFET\n\nDesigned for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common sou

恩XP

RF Power Field Effect Transistor

The RF MOSFET Line RF Power Field Effect Transistor N- Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large- signal,

文件：481.15 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET

Overview MRF9210R3 removed from active portfolio. View replacement parts via Part Number Search. \n•Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1900 mA\nIS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13\nOutput Power: 40 Watts\n\tPower Gain: 16.5 dB\n\tEfficiency: 25.5%\n\tAdjacent Channel Power:\n\t   750 kHz: –46.2 dBc in 30 kHz BW\n\t   1.98 MHz: –60 dBc in 30 kHz BW\n•C;

恩XP

FET RF 65V 880MHZ 860C3

恩XP